Please use this identifier to cite or link to this item:https://hdl.handle.net/20.500.12259/54346
Type of publication: research article
Type of publication (PDB): Straipsnis Clarivate Analytics Web of Science / Article in Clarivate Analytics Web of Science (S1)
Field of Science: Fizika / Physics (N002)
Author(s): Pranevičius, Liudvikas;Milčius, Darius;Pranevičius, Liudas;Orliukas, Antanas;Dudonis, Julius;Laukaitis, Giedrius
Title: Plasma oxidation of bilayered Y/Zr films
Is part of: Solid state ionics. Amsterdam : Elsevier B.V., 2008, Vol. 179, iss. 1-6
Extent: p. 104-107
Date: 2008
Keywords: YSZ films;Oxidation;Mixing;Surface instabilities
Abstract: The two-layered Y/Zr structures (0.1 μm thick of Y film on 1.0 μm thick of Zr film) have been deposited on silicon substrate and oxidized in Ar + O2 plasma in temperature range 350–800 °C simultaneously under irradiation by ions extracted by 100 V bias. The characterization of coating structure was carried out by the X-ray diffraction. The secondary ion mass-spectrometry was used for the recording of depth profiles of the most important elements in film and at interface. The surface topography was monitored by atomic force and scanning electron microscopes. It is shown that the oxidation kinetics in complex way depends on parameters of irradiation and temperature. The homogeneous nanocrystalline YSZ films have been obtained after plasma oxidation for temperatures higher than 450 °C and ion current density 1 mA•cm− 2. The atomic mixing and oxidation mechanisms are discussed. The emphasis is made on the analysis of surface instabilities acting as possible driving force for the intermixing and restructuring of Y/Zr layers
Internet: https://doi.org/10.1016/j.ssi.2007.12.038
Affiliation(s): Kauno technologijos universitetas
Lietuvos energetikos institutas
Vilniaus universitetas
Vytauto Didžiojo universitetas
Appears in Collections:Universiteto mokslo publikacijos / University Research Publications

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