Hydrogenation of Mg thin films in CH4 + Ar plasmas
Author | Affiliation | |||
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LT | ||||
Lietuvos energetikos institutas | LT | |||
LT | Lietuvos energetikos institutas | LT | ||
Templier, Claude | Université de Poitiers, France | FR |
Date |
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2010 |
Magnesium films were magnetron sputter deposited on AISI 316L stainless steel and hydrogenated at 450 K by the plasma immersion ion implantation technique using CH4 + Ar gases under a pressure of 10 Pa. The goal was to obtain hydrogen separation and formation of hydrides in Mg film thus avoiding a hydrogen gas purification process. The depth profiles of C and H atoms across the Mg film were analyzed by the Nuclear Reaction Analysis and secondary ion mass spectrometry. After 0.5 h of plasma treatment with a 1 kV bias voltage, C atoms remained in the near surface region while H atoms were homogeneously distributed across the entire film thickness. The results are explained on the basis of C and H ion implantation and atomic transport kinetics along the grain boundaries of a nanocrystalline Mg film.
Journal | IF | AIF | AIF (min) | AIF (max) | Cat | AV | Year | Quartile |
---|---|---|---|---|---|---|---|---|
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1.492 | 2.015 | 1.235 | 2.795 | 2 | 0.601 | 2010 | Q1 |
Journal | IF | AIF | AIF (min) | AIF (max) | Cat | AV | Year | Quartile |
---|---|---|---|---|---|---|---|---|
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1.492 | 2.015 | 1.235 | 2.795 | 2 | 0.601 | 2010 | Q1 |