Vandenilio elgsena Mg2Ni plonose dangose

Abstract

The Mg2Ni 1–3 μm layers were successfully deposited applying magnetron sputtering techniques. The deposited layers were hydrided using ions implantation from hydrogen plasma or the hydrided of the layers in hydrogen, in high pressure. On the basis of experimental results obtained using XRD, SEM and GDOES analytical techniques it was found that after the hydrogen plasma treatment Mg2Ni films were homogeneously enriched with hydrogen atoms through the film thickness and Mg2NiH0.3 was successfully formed. Up to now there are no successful results on Mg2NiH4 phase formation. This can be related to the desorption of hydrogen during the hydrogenation. After the hydrided of Mg2Ni thin films in hydrogen atmosphere, in high pressure, Mg2NiH4 thin films were successfully formed