Please use this identifier to cite or link to this item:https://hdl.handle.net/20.500.12259/37328
Type of publication: research article
Type of publication (PDB): Straipsnis Clarivate Analytics Web of Science / Article in Clarivate Analytics Web of Science (S1)
Field of Science: Fizika / Physics (N002)
Author(s): Pranevičius, Liudvikas;Milčius, Darius;Pranevičius, Liudas;Templier, Claude
Title: Hydrogen storage properties of Ti-doped MgAl films
Is part of: Przeglad elektrotechniczny = Electrical review. Warszawa : SIGMA-NOT, 2008, Vol. 84, iss. 3
Extent: p. 95-98
Date: 2008
Keywords: Hydrogen storage;MgAl films;Plasma implantation;Ti-doping
Abstract: The 2-5mu thick MgAl films with varying concentration of Ti have been hydrogenated employing plasma immersion ion implantation technique. It is shown that for Ti-doped film the dehydrogenation timeis 1.5 times shorter and the dehydrogenation temperature is 50 K less. When dehydrogenated MgAl film is exposed to air the major part of hydrogen effuses at similar to 630 K and the effusion process is controlled by the migration of hydrogen through the surface oxide layer
Internet: http://pe.org.pl/abstract_pl.php?nid=1381
Affiliation(s): Fizikos katedra
Lietuvos energetikos institutas
Vytauto Didžiojo universitetas
Appears in Collections:Universiteto mokslo publikacijos / University Research Publications

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