Use this url to cite publication: https://hdl.handle.net/20.500.12259/37328
Hydrogen storage properties of Ti-doped MgAl films
Type of publication
Straipsnis Web of Science ir Scopus duomenų bazėje / Article in Web of Science and Scopus database (S1)
Author(s)
Author | Affiliation | ||
---|---|---|---|
LT | |||
LT | Lietuvos energetikos institutas | ||
LT | |||
Templier, Claude | Université de Poitiers |
Title [en]
Hydrogen storage properties of Ti-doped MgAl films
Is part of
Przeglad elektrotechniczny = Electrical review
Date Issued
Date | Volume | Issue | Start Page | End Page |
---|---|---|---|---|
2008 | 84 | 3 | 95 | 98 |
Publisher
Warszawa : SIGMA-NOT
Is Referenced by
Extent
p. 95-98
Abstract (en)
The 2-5mu thick MgAl films with varying concentration of Ti have been hydrogenated employing plasma immersion ion implantation technique. It is shown that for Ti-doped film the dehydrogenation timeis 1.5 times shorter and the dehydrogenation temperature is 50 K less. When dehydrogenated MgAl film is exposed to air the major part of hydrogen effuses at similar to 630 K and the effusion process is controlled by the migration of hydrogen through the surface oxide layer.
Type of document
type::text::journal::journal article::research article
Language
Anglų / English (en)
Coverage Spatial
Lenkija / Poland (PL)
ISSN (of the container)
0033-2097
WOS
WOS:000256288600031
Other Identifier(s)
VDU02-000005174