Holo efektas galio arsenido kristaluose ir jo praktinis taikymas

Abstract

Paškevič Česlav postgraduate student of Physics and astrophysics (Information Technology branch). The Hall Effect and its practical use in Gallium Arsenide crystals. The thesis for a Master’s Degree in Physics (program code – 62102P108) / scientific supervisor – prof. habil. dr. R. Brazis; Vilnius Pedagogical University, Faculty of Physics and Technology, Department General Physics and Semiconductor Physics Institute, Plasma Phenomena and Chaos Laboratory – year 2006, pages 55. The aim of this thesis is to describe the Galvan magnetic effect – The Hall Effect (Classical, Quantum, Optical and Acoustic) and its practical use in Gallium Arsenide crystals, including the production of Hall Sensor. In addition to this, the contact effects in Semiconductors as well as the reasoning of this effect theory are presented. Furthermore, the whole sample – process of production of Hall sensor and the usage of produced Hall sensor by exploring magnetic fields (steady magnet and little electromagnets) are described. Hence, this research is a part of other measurements.